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| BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES Power dissipation.(PC=200mW) Epitaxial planar die construction. Complementary to MMSTA42. Also available in lead free version. Production specification MMSTA92 Pb Lead-free APPLICATIONS General purpose application and switching application. SOT-323 ORDERING INFORMATION Type No. MMSTA92 Marking K3R Package Code SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -310 -305 -5 -300 200 -55~150 Units V V V mA mW ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE Test conditions IC=-100A,IE=0 IC=-1mA,IB=0 IE=-100A,IC=0 VCB=-200V,IE=0 VEB=-5V,IC=0 VCE=-10V,IC=-1mA VCE=-10V,IC=-10mA VCE=-10V,IC=-80mA 60 100 60 MIN -310 -305 -5 -0.25 -0.1 200 TYP MAX UNIT V V V A A Document number: BL/SSSTF058 Rev.A www.galaxycn.com 1 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor Parameter Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCE(sat) VBE(sat) fT Test conditions IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-20V,IC= -10mA, f=30MHz Production specification MMSTA92 MIN TYP MAX -0.2 -0.9 50 UNIT V V MHz PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim A B C D E G H J K Min 1.8 1.15 0.15 0.25 1.2 0.02 2.1 Max 2.2 1.35 0.35 0.40 1.4 0.1 2.3 1.0Typical 0.1Typical All Dimensions in mm PACKAGE INFORMATION Device MMSTA92 Package SOT-323 Shipping 3000/Tape&Reel Document number: BL/SSSTF058 Rev.A www.galaxycn.com 2 |
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